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TK100E10N1 Datasheet Silicon N-Channel MOSFET

Manufacturer: Toshiba

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Datasheet Details

Part number TK100E10N1
Manufacturer Toshiba
File Size 247.03 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK100E10N1 Datasheet

Overview

TK100E10N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK100E10N1 1.

Applications • Switching Voltage Regulators 2.

Key Features

  • (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.8 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Single-pul.

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