TK12X53D Datasheet - Toshiba Semiconductor

TK12X53D MOSFETs

TK12X53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12X53D Switching Regulator Applications 9.2 MAX. Unit: mm 7.0 ± 0.2 4 0.8 MAX. 2.5 0.7 MAX. 9.2 MAX. 2.0 1.5 2.0 0.4 ± 0.1 Low drain-source ON resistance: RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 525 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (T.

TK12X53D Features

* equipment used in the ae

TK12X53D-ToshibaSemiconductor.pdf