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TK12A50E - MOSFETs

Key Features

  • (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.40 Ω (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 500 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1.2 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 1 2013-02-13 Rev.2.0 TK12A50E 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Singl.

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TK12A50E MOSFETs Silicon N-Channel MOS (π-MOS) TK12A50E 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.40 Ω (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 500 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1.2 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 1 2013-02-13 Rev.2.0 TK12A50E 4.