TK150F04K3 Description
RDS (ON) = 1.7mΩ (typ.) High forward transfer admittance: |Yfs| = 210 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) Enhancement-model:.
TK150F04K3 is MOSFETs manufactured by Toshiba.
| Part Number | Description |
|---|---|
| TK150F04K3L | MOSFETs |
| TK150E09NE | MOSFET |
| TK15A20D | N-Channel MOSFET |
| TK15A50D | Silicon N-Channel MOSFET |
| TK15A60D | N-Channel MOSFET |
RDS (ON) = 1.7mΩ (typ.) High forward transfer admittance: |Yfs| = 210 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) Enhancement-model:.