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TK150E09NE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅧ-H)
TK150E09NE
E-Bike
Low drain−source ON resistance : RDS (ON) = 3.6 mΩ (typ.) (VGS = 10 V)
Low leakage current
: IDSS = 10 μA (max) (VDS = 85 V)
Enhancement mode
: Vth = 2.5~4.5 V (VDS = 10 V, ID = 1.0 mA)
10.2±0.3
Φ3.7±0.1 A
2.74 6.51
Unit: mm
1.27±0.1
8.59±0.2 15.1±0.
TK150E09NE Datasheet
