TK150E09NE datasheet by Toshiba.
| Part number | TK150E09NE |
|---|---|
| Datasheet | TK150E09NE-ToshibaSemiconductor.pdf |
| File Size | 922.68 KB |
| Manufacturer | Toshiba |
| Description | MOSFET |
|
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TK150E09NE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅧ-H) TK150E09NE E-Bike Low drain−source ON resistance : RDS (ON) = 3.6 mΩ (typ.) (VGS = 10 V) Low leakage current : IDSS = 10 μA (max) (VDS = 85 V) Enhancement mode.
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