TK150F04K3 Description
RDS (ON) = 1.7mΩ (typ.) High forward transfer admittance: |Yfs| = 210 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) Enhancement-model:.
TK150F04K3 Datasheet
| Part number | TK150F04K3 |
|---|---|
| Download | TK150F04K3 Datasheet (PDF) |
| File Size | 206.24 KB |
| Manufacturer | Toshiba |
| Description | MOSFETs |
|
|