TK150F04K3 Overview
RDS (ON) = 1.7mΩ (typ.) High forward transfer admittance: |Yfs| = 210 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) Enhancement-model:.
TK150F04K3 Datasheet Details
| Part number | TK150F04K3 |
|---|---|
| Datasheet | TK150F04K3-ToshibaSemiconductor.pdf |
| File Size | 206.24 KB |
| Manufacturer | Toshiba |
| Description | MOSFETs |
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