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TK150F04K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV)
TK150F04K3
Swiching Regulator, DC-DC Converter Applications Motor Drive Applications
10.0 ± 0.3 9.5 ± 0.2 1.0 ± 0.3
• • • •
Low drain-source ON resistance: RDS (ON) = 1.7mΩ (typ.) High forward transfer admittance: |Yfs| = 210 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) Enhancement-model: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
1.1
Unit: mm
0.4 ± 0.1 10.0 ± 0.3
1.6
Absolute Maximum Ratings (Ta = 25°C)
0.76 ± 0.1
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1)
Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg
Rating 40 40 ±20 150 450 300 234 150 30 175 −55 to 175
Unit V V V A W
1.4 ± 0.1 2.54 ± 0.
TK150F04K3 Datasheet
