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TK17A65W5 - Silicon N-Channel MOSFET

Features

  • (1) Fast reverse recovery time: trr = 110 ns (typ. ) (2) Low drain-source on-resistance: RDS(ON) = 0.19 Ω (typ. ) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.9 mA) 3. Packaging and Internal Circuit TK17A65W5 TO-220SIS 1: Gate 2: Drain 3: Source ©2015 Toshiba Corporation 1 Start of commercial production 2013-09 2015-09-17 Rev.3.0 TK17A65W5 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwi.

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MOSFETs Silicon N-Channel MOS (DTMOS) TK17A65W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 110 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.19 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.9 mA) 3. Packaging and Internal Circuit TK17A65W5 TO-220SIS 1: Gate 2: Drain 3: Source ©2015 Toshiba Corporation 1 Start of commercial production 2013-09 2015-09-17 Rev.3.0 TK17A65W5 4.
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