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TK17A65W5 - N-Channel MOSFET

Datasheet Summary

Features

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  • Low drain-source on-resistance: RDS(ON) = 0.19Ω (typ. ).
  • Enhancement mode: Vth = 3.0 to 4.5V (VDS = 10 V, ID=0.9mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number TK17A65W5
Manufacturer INCHANGE
File Size 248.53 KB
Description N-Channel MOSFET
Datasheet download datasheet TK17A65W5 Datasheet
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Full PDF Text Transcription

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INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK17A65W5，ITK17A65W5 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.19Ω (typ.) ·Enhancement mode: Vth = 3.0 to 4.5V (VDS = 10 V, ID=0.9mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 17.3 IDM Drain Current-Single Pulsed 69.2 PD Total Dissipation @TC=25℃ 45 Tj Max.
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