TK17A65W5 - Silicon N-Channel MOSFET

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Toshiba Semiconductor

Part number	TK17A65W5
Manufacturer	Toshiba Semiconductor
File Size	242.60 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK17A65W5 Datasheet
Additional preview pages of the TK17A65W5 datasheet.

(1) Fast reverse recovery time: trr = 110 ns (typ. ) (2) Low drain-source on-resistance: RDS(ON) = 0.19 Ω (typ. ) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.9 mA) 3. Packaging and Internal Circuit TK17A65W5 TO-220SIS 1: Gate 2: Drain 3: Source ©2015 Toshiba Corporation 1 Start of commercial production 2013-09 2015-09-17 Rev.3.0 TK17A65W5 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwi.

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Published: Sep 20, 2014 |