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TK1Q90A Datasheet - Toshiba Semiconductor

Silicon N-Channel MOSFET

TK1Q90A Features

* (1) Low drain-source on-resistance: RDS(ON) = 6.7 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 1.0 S (typ.) (3) Low leakage current: IDSS = 100 µA (max) (VDS = 720 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK1Q90A 1: Gate (G) 2:

TK1Q90A Datasheet (265.53 KB)

Preview of TK1Q90A PDF

Datasheet Details

Part number:

TK1Q90A

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

265.53 KB

Description:

Silicon n-channel mosfet.

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TK1Q90A Silicon N-Channel MOSFET Toshiba Semiconductor

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