TK35E08N1 Datasheet Silicon N-Channel MOSFET

Manufacturer: Toshiba

Datasheet Details

TK35E08N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK35E08N1 1.

Applications • Switching Voltage Regulators 2.

(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 10.0 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Single-pul.

Brand Logo	Part Number	Description	Manufacturer
	TK35E08N1	N-Channel MOSFET	INCHANGE