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TK35E08N1 - N-Channel MOSFET

Features

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  • Low drain-source on-resistance: RDS(on) ≤12.2mΩ. (VGS = 10 V).
  • Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=0.3mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – TK35E08N1

Datasheet Details

Part number TK35E08N1
Manufacturer INCHANGE
File Size 241.74 KB
Description N-Channel MOSFET
Datasheet download datasheet TK35E08N1 Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK35E08N1，ITK35E08N1 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤12.2mΩ. (VGS = 10 V) ·Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=0.3mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 80 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 55 IDM Drain Current-Single Pulsed 116 PD Total Dissipation @TC=25℃ 72 Tj Max.
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