Datasheet4U Logo Datasheet4U.com

TK35E08N1 - Silicon N-Channel MOSFET

Key Features

  • (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 10.0 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Single-pul.

📥 Download Datasheet

Datasheet Details

Part number TK35E08N1
Manufacturer Toshiba
File Size 244.79 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK35E08N1 Datasheet

Full PDF Text Transcription for TK35E08N1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TK35E08N1. For precise diagrams, and layout, please refer to the original PDF.

TK35E08N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK35E08N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON...

View more extracted text
ulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 10.0 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo TK35E08N1 N-Channel MOSFET INCHANGE

More Datasheets from Toshiba

Part Number Description
TK35A08N1 Silicon N-Channel MOSFET
TK35A65W Silicon N-Channel MOSFET
TK35A65W5 Silicon N-Channel MOSFET
TK35N65W Silicon N-Channel MOSFET
TK35N65W5 Silicon N-Channel MOSFET
TK35S04K3L Silicon N-Channel MOSFET
TK30A06J3A MOSFET
TK30A06N1 Silicon N-Channel MOSFET
TK30E06N1 Silicon N-Channel MOSFET
TK30J25D Silicon N-Channel MOSFET