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TK4P60D - Silicon N-Channel MOSFET

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Features

  • (1) Low drain-source on-resistance: RDS(ON) = 1.4 Ω (typ. ) (2) High forward transfer admittance: |Yfs| = 2.5 S (typ. ) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK4P60D 1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S) DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS.

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Datasheet Details

Part number TK4P60D
Manufacturer Toshiba Semiconductor
File Size 234.02 KB
Description Silicon N-Channel MOSFET
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MOSFETs Silicon N-Channel MOS (π-MOS) TK4P60D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.4 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 2.5 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK4P60D 1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S) DPAK 4.
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