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Toshiba Electronic Components Datasheet

TK4P60D Datasheet

MOSFETs

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MOSFETs Silicon N-Channel MOS (π-MOS)
TK4P60D
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 1.4 (typ.)
(2) High forward transfer admittance: |Yfs| = 2.5 S (typ.)
(3) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V)
(4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK4P60D
1: Gate (G)
2: Drain (D)(Heatsink)
3: Source (S)
DPAK
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 600 V
Gate-source voltage
VGSS
±30
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
(Tc = 25)
(Note 1)
(Note 1)
(Note 2)
(Note 3)
(Note 1)
(Note 1)
ID
IDP
PD
EAS
IAR
IDR
IDRP
Tch
4A
16
100 W
158 mJ
4A
4
16
150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2012-01-31
Rev.1.0


Toshiba Electronic Components Datasheet

TK4P60D Datasheet

MOSFETs

No Preview Available !

5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25(initial), L = 17.3 mH, RG = 25 , IAR = 4 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature
TK4P60D
Symbol
Rth(ch-c)
Rth(ch-a)
Max Unit
1.25 /W
125
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2 2012-01-31
Rev.1.0


Part Number TK4P60D
Description MOSFETs
Maker Toshiba Semiconductor
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TK4P60D Datasheet PDF






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