Datasheet4U Logo Datasheet4U.com

TK4P60DB - N-Channel MOSFET

Datasheet Summary

Features

  • Low drain-source on-resistance: RDS(ON) = 2Ω (MAX).
  • Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – TK4P60DB

Datasheet Details

Part number TK4P60DB
Manufacturer INCHANGE
File Size 284.47 KB
Description N-Channel MOSFET
Datasheet download datasheet TK4P60DB Datasheet
Additional preview pages of the TK4P60DB datasheet.

📁 Similar Datasheet

  • TK4P60DB - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK4P60D - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK4P60DA - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK4P50D - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK4P55D - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK4P55DA - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK40A06N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK40A08K3 - MOSFET (Toshiba Semiconductor)
  • TK40A10J1 - MOSFET (Toshiba Semiconductor)
  • TK40A10K3 - Field Effect Transistor (Toshiba Semiconductor)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
iscN-Channel MOSFET Transistor TK4P60DB ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 2Ω (MAX) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 3.7 A IDM Drain Current-Single Pulsed 14.8 A PD Total Dissipation @TC=25℃ 80 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.56 UNIT ℃/W isc website：www.iscsemi.
Published: |