TK4P60D Datasheet Text
MOSFETs Silicon N-Channel MOS (π-MOS)
TK4P60D
1. Applications
- Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 1.4 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 2.5 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK4P60D
1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S)
DPAK
4....
