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TK4P60DB - Silicon N-Channel MOSFET

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Features

  • (1) Low drain-source on-resistance : RDS(ON) = 1.6 Ω (typ. ) (2) High forward transfer admittance : |Yfs| = 2.2 S (typ. ) (3) Low leakage current : IDSS = 10 µA (max) (VDS = 600 V) (4) Enhancement mode : Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK4P60DB DPAK 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial production 2009-12 1 2015-03-05 Rev.1.0 TK4P60DB 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics.

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Datasheet Details

Part number TK4P60DB
Manufacturer Toshiba Semiconductor
File Size 835.15 KB
Description Silicon N-Channel MOSFET
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MOSFETs Silicon N-Channel MOS (π-MOS) TK4P60DB 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance : RDS(ON) = 1.6 Ω (typ.) (2) High forward transfer admittance : |Yfs| = 2.2 S (typ.) (3) Low leakage current : IDSS = 10 µA (max) (VDS = 600 V) (4) Enhancement mode : Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK4P60DB DPAK 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial production 2009-12 1 2015-03-05 Rev.1.0 TK4P60DB 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 3.7 A Drain current (pulsed) (Note 1) IDP 14.
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