TK4P60DA Datasheet Text
MOSFETs Silicon N-Channel MOS (π-MOS)
TK4P60DA
1. Applications
- Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 1.7 Ω (typ.) (VGS = 10 V) (2) High forward transfer admittance: |Yfs| = 2.2 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK4P60DA
DPAK
1: Gate 2: Drain (Heatsink) 3: Source
©2015 Toshiba Corporation
1
Start of mercial production
2009-12
2015-08-03 Rev.3.0
TK4P60DA
4....
