| Part Number | TK4P60DB Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | MOSFETs Silicon N-Channel MOS (π-MOS) TK4P60DB 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance : RDS(ON) = 1.6 Ω (typ.) (2) High forward transfer admitta. (1) Low drain-source on-resistance : RDS(ON) = 1.6 Ω (typ.) (2) High forward transfer admittance : |Yfs| = 2.2 S (typ.) (3) Low leakage current : IDSS = 10 µA (max) (VDS = 600 V) (4) Enhancement mode : Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK4P60DB DPAK 1: G. |
TK4P60DB Datasheet and Specifications PDF
The TK4P60DB is a Silicon N-Channel MOSFET.
Key Specifications
| Package | DPAK |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | TK4P60DB Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
iscN-Channel MOSFET Transistor
TK4P60DB
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 2Ω (MAX) ·Enhancement mode:
Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-.
*Low drain-source on-resistance: RDS(ON) = 2Ω (MAX) *Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Switching Voltage Regulators *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY. |