TK65G10N1 - Silicon N-Channel MOSFET

Name: TK65G10N1
SKU: TK65G10N1-837195

Toshiba Semiconductor

The TK65G10N1 by Toshiba Semiconductor is a Silicon N-Channel MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	TK65G10N1
Manufacturer	Toshiba Semiconductor
File Size	240.86 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK65G10N1-ToshibaSemiconductor.pdf
Additional preview pages of the TK65G10N1 datasheet.

(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source D2PAK Start of commercial production 1 2013-08 2014-06-30 Rev.4.0 TK65G10N1 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain cur.

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Published: Sep 6, 2014 |