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TK65G10N1 - N-Channel MOSFET

Key Features

  • Low drain-source on-resistance: RDS(on) ≤4.5mΩ. (VGS = 10 V).
  • Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor TK65G10N1 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤4.5mΩ. (VGS = 10 V) ·Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 65 A IDM Drain Current-Single Pulsed 283 A PD Total Dissipation @TC=25℃ 156 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.8 UNIT ℃/W isc website：www.