* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-3P(N) 4. Absolute Maximum
TK70J06K3 Datasheet (227.52 KB)
TK70J06K3
Toshiba ↗ Semiconductor
227.52 KB
Mosfets.
TK70J06K3 MOSFETs Silicon N-channel MOS (U-MOS) TK70J06K3 1. Applications Switching Voltage Regulators DC-DC Converter.
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