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TK80X04K3 - Silicon N-Channel MOSFET

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TK80X04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TK80X04K3 9.2 MAX. 7.0 ± 0.2 4 0.8 MAX. 2.5 0.7 MAX. 9.2 MAX. 2.0 1.5 2.0 1 2 3 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • • • • Low drain-source ON-resistance: RDS (ON) = 2.7 mΩ (typ.) High forward transfer admittance: |Yfs| = 150 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm 0.4 ± 0.1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 40 40 ±20 80 320 125 123 80 12.5 175 −55 to 175 Unit V V A W mJ A mJ °C °C 1.
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