TK80D08K3 Datasheet | Toshiba

TK80D08K3 .. TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) Switching Regulator Applications - - - - Low drain-source ON-resistance: RDS (ON) = 3.6 mΩ (typ.) High forward transfer admittance: |Yfs| = 200 S Low leakage current: IDSS = 10 μA (max) (VDS = 75 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 m A) 10.0±0.3 9.5±0.2 A 0.6±0.1 Ф3.65±0.2 Unit: mm 3.2 2.8 1.1±0.15 2.8Max. 9.0 15.0±0.3 0.75±0.25 12.8±0.5 +0.25 0.57 -0.10 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 75 75 ±20 80 320 100 443 80 10 150 - 55 to 150 Unit V V V A W m J A m J °C °C 0.62±0.15 Ф0.2 M A Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 1: Gate 2: Drain (Heat Sink) 3: Source 4.5±0.2 2.53±0.2 JEDEC JEITA TOSHIBA ⎯ ⎯ 2-10V1A Weight: 1.35 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 1.25 83.3 Unit °C/W °C/W Internal Connection Note 1: Ensure that the channel and lead temperatures do not exceed 150°C. Note 2: VDD =...