TK80X04K3 Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) 9.2 MAX. 7.0 ± 0.2 4 0.8 MAX. 2.5 0.7 MAX. 9.2 MAX. 2.0 1.5 2.0 1 2 3 Switching Regulator, DC-DC Converter Applications Motor Drive Applications - - - - Low drain-source ON-resistance: RDS (ON) = 2.7 mΩ (typ.) High forward transfer admittance: |Yfs| = 150 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 m A) Unit: mm 0.4 ± 0.1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 40 40 ±20 80 320 125 123 80 12.5 175 - 55 to 175 Unit V V A W m J A m J °C °C 1.0 ± 0.2 1.0 ± 0.2 3.6 ± 0.2 1. 2. 3. 4. ：G GATE N.C. SOURSE ：S DRAIN ：D Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range (Note 4) (Note 4) JEDEC JEITA TOSHIBA SC-97 2-9F1C Weight: 0.74 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.2 Unit 1 °C/W 0.4 ± 0.1 ⎯ Note 1: Ensure that the channel temperature does not exceed 175°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 20 μH, IAR = 80 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature Note 4: The definitions of the absolute maximum channel temperature and storage temperatures are based on AEC-Q101. Note 5: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the...