| Part number | TK80X04K3 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 181.88 KB |
| Description | Silicon N-Channel MOSFET |
| Datasheet | TK80X04K3-ToshibaSemiconductor.pdf |
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TK80X04K3 • • • • Low drain-source ON-resistance: RDS (ON) = 2.7 mΩ (typ.) High forward transfer admittance: |Yfs| = 150 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
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