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TK8A10K3 Field Effect Transistor

TK8A10K3 Description

TK8A10K3 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TK8A10K3 Swiching Regulator Applications * * * L.

TK8A10K3 Features

* roduct for Unintended

TK8A10K3 Applications

* Low drain-source ON resistance: RDS (ON) = 90 mΩ (typ. ) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate v

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Field Effect Transistor Toshiba Semiconductor
Toshiba Semiconductor TK8A10K3-like datasheet