Datasheet4U Logo Datasheet4U.com

TK9A20DA - Silicon N-channel MOSFET

Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.26 Ω (typ. ) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK9A20DA 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 200 V Gate-source voltage VGSS ±20 Drain current (DC) Drain current (pulsed.

📥 Download Datasheet

Datasheet preview – TK9A20DA

📁 Similar Datasheet

Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
MOSFETs Silicon N-Channel MOS (π-MOS) TK9A20DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.26 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK9A20DA 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4.
Published: |