* (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 1.0 nC (typ.) Low drain-source on-resistance: RDS(ON) = 66 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packagi
TPC6009-H Datasheet (225.20 KB)
TPC6009-H
Toshiba ↗ Semiconductor
225.20 KB
Mosfets.
TPC6009-H MOSFETs Silicon N-Channel MOS (U-MOS-H) TPC6009-H 1. Applications High-Efficiency DC-DC Converters Notebook .
📁 Related Datasheet
TPC6001 N-Channel MOSFET (Toshiba Semiconductor)
TPC6002 N-Channel MOSFET (Toshiba Semiconductor)
TPC6003 N-Channel MOSFET (Toshiba Semiconductor)
TPC6004 N-Channel MOSFET (Toshiba Semiconductor)
TPC6005 N-Channel MOSFET (Toshiba Semiconductor)
TPC6006-H N-Channel MOSFET (Toshiba Semiconductor)
TPC6008-H MOSFETs (Toshiba Semiconductor)
TPC6010-H N-Channel MOSFET (Toshiba)
TPC6011 N-Channel MOSFET (Toshiba)
TPC6012 N-Channel MOSFET (Toshiba)
