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TPC6009-H - MOSFETs

Key Features

  • (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 1.0 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 66 mΩ (typ. ) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 1, 2, 5, 6: Drain 3: Gate 4: Source VS-6 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Dr.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPC6009-H MOSFETs Silicon N-Channel MOS (U-MOS-H) TPC6009-H 1. Applications • • • High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 1.0 nC (typ.) Low drain-source on-resistance: RDS(ON) = 66 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 1, 2, 5, 6: Drain 3: Gate 4: Source VS-6 4.