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TPC6002
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
TPC6002
Notebook PC Applications Portable Equipment Applications
· · · · Low drain-source ON resistance: RDS (ON) = 25 mΩ (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement-model: Vth = 1.3 to 2.
TPC6002 Datasheet
