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TPC6006-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPC6006-H
Notebook PC Applications Portable Equipment Applications
Unit: mm
• Small footprint due to small and thin package • High-speed switching • Small gate charge: Qsw = 2.4 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 59 mΩ (typ.) • High forward transfer admittance: |Yfs| = 7 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) • Enhancement mode: Vth = 1.1 to 2.
TPC6006-H Datasheet
