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TPC8029 - Field Effect Transistor

Features

  • NS.
  • Product is intended for use in general electronics.

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Datasheet Details

Part number TPC8029
Manufacturer Toshiba
File Size 217.88 KB
Description Field Effect Transistor
Datasheet download datasheet TPC8029 Datasheet

Full PDF Text Transcription

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TPC8029 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8029 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 2.9 mΩ (typ.) High forward transfer admittance: |Yfs| = 40 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.
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