TPC8076 Datasheet MOSFETs

Manufacturer: Toshiba

Datasheet Details

TPC8076 MOSFETs Silicon N-Channel MOS (U-MOS) TPC8076 1.

Applications • • • Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments 2.

(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 3.9 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 33 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (p.