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TPC8003
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
TPC8003
Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications
Small footprint due to small and thin package Low drain−source ON resistance : RDS (ON) = 5.4 mΩ (typ.) High forward transfer admittance : |Yfs| = 21 S (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode : Vth = 0.8~2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating 30 30 ±20 13 52 2.4 1.0 220 13 0.
TPC8003 Datasheet
