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TPC8005-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High Speed U−MOS)
TPC8005−H
High Speed and High Efficiency DC−DC Converters Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications
Small footprint due to small and thin package High speed switching : 60% speed up (compare with current type) Small gate charge : Qg = 20 nC (typ.) : RDS (ON) = 13 mΩ (typ.) Low drain−source ON resistance Unit: mm
High forward transfer admittance : |Yfs| = 16 S (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 30 V) Enhancement−mode : Vth = 1.3~2.
TPC8005-H Datasheet
