TPC8005-H Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High Speed U- MOS) TPC8005- H High Speed and High Efficiency DC- DC Converters Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package High speed switching : 60% speed up (pare with current type) Small gate charge : Qg = 20 nC (typ.) : RDS (ON) = 13 mΩ (typ.) Low drain- source ON resistance Unit: mm High forward transfer admittance : |Yfs| = 16 S (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 30 V) Enhancement- mode : Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate...