Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π- MOSVI)
Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications
Small footprint due to small and thin package Low drain- source ON resistance : RDS (ON) = 37 mΩ (typ.) High forward transfer admittance : |Yfs| = 6 S (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 30 V) Enhancement- mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS...