Datasheet Summary
..
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)
High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications
6.0±0.3 0.5±0.1 8 1.27 0.4±0.1 5
Unit: mm
0.05 M A
5.0±0.2
- -
- -
- -
- Small footprint due to small and thin package High speed switching Small gate charge: Qg = 25 nC (typ.) Low drain-source ON resistance: RDS (ON) = 5.1 mΩ (typ.) High forward transfer admittance: |Yfs| = 60S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
0.15±0.05
1 5.0±0.2 0.95±0.05
0.595 A 0.166±0.05
S...