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TPCA8005-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)
TPCA8005-H
High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications
6.0±0.3
TENTATIVE
Unit: mm
0.5±0.1 8 1.27 0.4±0.1 5 0.05 M A
5.0±0.2
• • • • • • •
Small footprint due to small and thin package High speed switching Small gate charge: Qg = 24 nC (typ.) Low drain-source ON resistance: RDS (ON) = 6.8 mΩ (typ.) High forward transfer admittance: |Yfs| = 46S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
0.15±0.05
1 5.0±0.2 0.95±0.05
4
0.595 A 0.166±0.05
S 1
0.05 S 4 1.1±0.2
0.6±0.
TPCA8005-H Datasheet
