Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVII)
Switching Regulator Applications Motor Drive Applications DC／DC Converter Applications
0.5±0.1
Unit: mm
1.27 0.4±0.1
0.05 M A
6.0±0.3 5.0±0.2
- Small footprint due to a small and thin package
- High speed switching
- Low drain-source ON-resistance
: RDS (ON) = 41 mΩ (typ.) (VG=10V, ID=9A)
- High forward transfer admittance: |Yfs| = 15 S (typ.)
- Low leakage current: IDSS = 100 μA (max) (VDS = 100 V)
- Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
0.15±0.05
0.166±0.05
0.95±0.05
5.0±0.2
0.595 A
0.05 S
1.1±0.2
0.6±0.1
3.5±0.2...