Datasheet Summary
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TENTATIVE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (ƒÎ -MOSVII)
0.5±0.1
Switching Regulator Applications Motor Drive Applications
6.0±0.3
Unit: mm
1.27 8 0.4±0.1 5 0.05 M A
- -
- -
- High speed switching Low drain-source ON resistance : R DS (ON) = 30 mO (typ.) (VG =10V, ID=10A) High forward transfer admittance: |Yfs| = 19 S (typ.) Low leakage current: IDSS = 100 µA (max) (V DS = 100 V) Enhancement mode: V th = 3.0 to 5.0 V (V DS = 10 V, ID = 1 mA)
5.0±0.2
- Small footprint due to small and thin package
0.15±0.05
1 0.95±0.05
0.595 0.166±0.05 A
5.0±0.2
S 1 0.6±0.1 4
Maximum Ratings (Ta = 25°C)
Characteristics...