TPCA8031-H - Silicon N-Channel MOSFET

Datasheet Details

Part number	TPCA8031-H
Manufacturer	Toshiba Electronic Devices & Storage
File Size	172.93 KB
Description	Silicon N-Channel MOSFET
Datasheet	TPCA8031-H Datasheet
Additional preview pages of the TPCA8031-H datasheet.

📁 Similar Datasheet

TPCA8030-H - Silicon N-Channel MOSFET (Toshiba)
TPCA8036-H - Silicon N-Channel MOSFET (Toshiba)
TPCA8019-H - MOSFET (TOSHIBA)
TPCA8040-H - Silicon N-Channel MOSFET (Toshiba)
TPCA8042 - Silicon N-Channel MOSFET (Toshiba)
TPCA8045-H - Silicon N-Channel MOSFET (Toshiba)
TPCA8046-H - Silicon N-Channel MOSFET (Toshiba)
TPCA8047-H - Silicon N-Channel MOSFET (Toshiba)
TPCA8048-H - Silicon N-Channel MOSFET (Toshiba)
TPCA8049-H - Silicon N-Channel MOSFET (Toshiba)

Other Datasheets by Toshiba Semiconductor

TPCA8039-H - Silicon N-Channel MOSFET
TPCA8003-H - Field Effect Transistor Silicon N Channel MOS Type
TPCA8004-H - TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
TPCA8005-H - Silicon N Channel MOS Type
TPCA8006-H - Silicon N-Channel MOSFET
TPCA8007-H - Switching Regulator Applications
TPCA8008-H - Field Effect Transistor
TPCA8009-H - High Speed Switching Applications

Full PDF Text Transcription

Click to expand full text

TPCA8031-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS V-H) TPCA8031-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm 1.27 0.4 ± 0.1 8 0.05 M A 5 6.0 ± 0.3 5.0 ± 0.2 • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 5.0 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 7.3 mΩ (typ.) • High forward transfer admittance: |Yfs| = 60 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) 0.95 ± 0.05 0.15 ± 0.05 0.166 ± 0.05 4 0.595 1 A 5.0 ± 0.2 0.05 S S 1 4 1.1 ± 0.2 0.6 ± 0.1 3.5 ± 0.

Published: Sep 20, 2014 |