Datasheet Summary
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)
0.5±0.1
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
6.0±0.3
Unit: mm
1.27 8 0.4±0.1 5 0.05 M A
- -
- -
- Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 4.5mΩ (typ.) High forward transfer admittance: |Yfs| = 60S (typ.) Low leakage current: IDSS =
- 10 µA (max) (VDS =
- 30 V) Enhancement mode: Vth =
- 0.8 to
- 2.0 V (VDS =
- 10 V, ID =
- 1 mA)
5.0±0.2
0.15±0.05
1 0.95±0.05
0.595 A
5.0±0.2
S 1 4
4.25±0.2
Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current...