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TPCA8103
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ)
TPCA8103
0.5±0.1
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
6.0±0.3
Unit: mm
1.27 8 0.4±0.1 5 0.05 M A
• • • • •
Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 3.1 mΩ (typ.) High forward transfer admittance: |Yfs| =45S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
5.0±0.2
0.15±0.05
1 0.95±0.05
4
0.595 A
5.0±0.
TPCA8103 Datasheet
