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TPCA8108 - Silicon P-Channel MOSFET

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TPCA8108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) TPCA8108 High-Side Switching Applications Motor Drive Applications • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 7.7 mΩ (typ.) • High forward transfer admittance: |Yfs| = 41S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −40 V) • Enhancement mode: Vth = −1.5 to −3.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) 0.5±0.1 1.27 0.4±0.1 8 5 Unit: mm 0.05 M A 6.0±0.3 5.0±0.2 0.15±0.05 0.95±0.05 1 4 5.0±0.2 0.595 A 0.166±0.
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