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TPCA8A02-H - Silicon N-Channel MOSFET

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  • ctor Reliability Handbook” and (b) the instructions for the.

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Datasheet Details

Part number TPCA8A02-H
Manufacturer Toshiba
File Size 209.68 KB
Description Silicon N-Channel MOSFET
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Full PDF Text Transcription for TPCA8A02-H (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TPCA8A02-H. For precise diagrams, and layout, please refer to the original PDF.

TPCA8A02-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A02-H High Efficiency DC-DC Converter Applicat...

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S Type (U-MOS V-H) TPCA8A02-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications 0.5±0.1 1.27 8 0.4±0.1 5 Unit: mm 0.05 M A • • • • • • • Built-in a schottky barrier diode 6.0±0.3 High-speed switching Small gate charge: QSW = 8.6 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 3.8 mΩ (typ.) High forward transfer admittance: |Yfs| = 90 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1 mA) 5.0±0.2 Low forward voltage: VDSF = −0.6 V (max) 0.15±0.05 1 5.0±0.2 0.95±0.05 4 0.595 A 0.166±0.05 S 1 0.05 S 4

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