TPCA8A02-H Description
mm 0.05 M A Built-in a schottky barrier diode 6.0±0.3 High-speed switching Small gate charge: QSW = 8.6 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 3.8 mΩ (typ.) High forward transfer admittance:.
- Part: TPCA8A02-H
- Manufacturer: Toshiba
- Size: 209.68 KB
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