Datasheet Summary
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS Ⅲ)
High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications
0.5±0.1 1.27 0.4±0.1 85
Unit: mm
0.05 M A
6.0± 0.3 5.0±0.2
- Built-in schottky barrier diode
Low forward voltage: VDSF =
- 0.6 V (max)
- Small footprint due to a small and thin package
- High speed switching
- Small gate charge: Qsw =11 nC (typ.)
- Low drain-source ON-resistance: RDS (ON) =4.3 mΩ (typ.)
- High forward transfer admittance: |Yfs| = 70 S (typ.)
- Low leakage current: IDSS = 100 μA (max) (VDS = 30 V)
- Enhancement mode: Vth = 1.1...