TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
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TPCA8A01-H
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS Ⅲ)
TPCA8A01-H
High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications
0.5±0.1 1.27 0.4±0.1 85
Unit: mm
0.05 M A
6.0± 0.3 5.0±0.2
• Built-in schottky barrier diode
Low forward voltage: VDSF = −0.6 V (max) • Small footprint due to a small and thin package
• High speed switching
• Small gate charge: Qsw =11 nC (typ.) • Low drain-source ON-resistance: RDS (ON) =4.3 mΩ (typ.) • High forward transfer admittance: |Yfs| = 70 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.1 to 2.
TPCA8A01-H Datasheet
