TPCA8A02-H Description
mm 0.05 M A Built-in a schottky barrier diode 6.0±0.3 High-speed switching Small gate charge: QSW = 8.6 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 3.8 mΩ (typ.) High forward transfer admittance:.
TPCA8A02-H Datasheet
| Part number | TPCA8A02-H |
|---|---|
| Download | TPCA8A02-H Datasheet (PDF) |
| File Size | 209.68 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel MOSFET |
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