Datasheet Summary
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H)
High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications
0.5±0.1 1.27 8 0.4±0.1 5
Unit: mm
0.05 M A
- -
- -
- -
- Built-in a schottky barrier diode
6.0±0.3
High-speed switching Small gate charge: QSW = 8.6 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 3.8 mΩ (typ.) High forward transfer admittance: |Yfs| = 90 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1 mA)
5.0±0.2
Low forward voltage: VDSF =
- 0.6 V (max)
0.15±0.05
1 5.0±0.2...