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TPCL4201 - Silicon N-Channel MOSFET

General Description

of the precautions, and comply with the precautions stated.

7.

Electrical Characteristics 7.1.

Key Features

  • (1) (2) (3) (4) (5) Small, thin package Low source-source on-resistance: RSS(ON) = 26 mΩ (typ. ) (VGS = 4.5 V) Low leakage current: ISSS = 10 µA (max) (VSS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VSS = 10 V, IS = 200 µA) Common drain 3. Packaging and Internal Circuit 1: Source 1 2: Gate 1 3: Gate 2 4: Source 2 ChipLGA 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Source-source voltage Gate-source voltage Source current (DC) Source current (puls.

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Datasheet Details

Part number TPCL4201
Manufacturer Toshiba
File Size 384.88 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TPCL4201 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPCL4201 MOSFETs Silicon N-Channel MOS (U-MOS) TPCL4201 1. Applications • Dedicated to Single-Cell Lithium-Ion Secondary Battery Applications The product(s) described herein should not be used for any other application. Note: 2. Features (1) (2) (3) (4) (5) Small, thin package Low source-source on-resistance: RSS(ON) = 26 mΩ (typ.) (VGS = 4.5 V) Low leakage current: ISSS = 10 µA (max) (VSS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VSS = 10 V, IS = 200 µA) Common drain 3. Packaging and Internal Circuit 1: Source 1 2: Gate 1 3: Gate 2 4: Source 2 ChipLGA 4.