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TPCP8004
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
TPCP8004
Notebook PC Applications Portable Equipment Applications
0.33 ± 0.05
0.05 M A
8
5
Unit: mm
2.4 ± 0.1 2.8 ± 0.1
• Small footprint due to a small and thin package • High speed switching • Small gate charge: Qg = 26nC (typ.) • Low drain-source ON-resistance: RDS(ON) = 7mΩ(typ.) • High forward transfer admittance: |Yfs| = 21S (typ.) • Low leakage current: IDSS = 10μA (max) (VDS = 30V) • Enhancement mode: Vth = 1.3 to 2.5V (VDS = 10V, ID = 1mA)
Absolute Maximum Ratings (Ta=25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS=20 kΩ)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
Drain current
DC (Note 1)
ID
8.3 A
Pulse (Note 1)
IDP
33.
TPCP8004 Datasheet
