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TPCP8010 - Silicon N-Channel MOSFET

Key Features

  • (1) AEC-Q101 qualified (2) Small, thin package (3) Small gate charge : QSW = 4.9 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 19.1 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enhancement mode: Vth = 2 to 3 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TPCP8010 PS-8 1,2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2012-12 2016-02-23 Rev.5.0 TPCP8010 4. Absolute Maximum Ratin.

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Datasheet Details

Part number TPCP8010
Manufacturer Toshiba
File Size 266.46 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TPCP8010 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-channel MOS (U-MOS) TPCP8010 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Small gate charge : QSW = 4.9 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 19.1 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enhancement mode: Vth = 2 to 3 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TPCP8010 PS-8 1,2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2012-12 2016-02-23 Rev.5.0 TPCP8010 4.