TPCP8013 Datasheet | Toshiba

Features (1) AEC-Q101 qualified (2) Small, thin package (3) Small gate charge : QSW = 4.5 n C (typ.) (4) Low drain-source on-resistance: RDS(ON) = 41.5 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 2 to 3 V (VDS = 10 V, ID = 1 m A) 3. Packaging and Internal Circuit PS-8 1,2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation Start of mercial production 2012-10 2016-02-23 Rev.5.0 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) Drain current (pulsed) (Note 1) Power dissipation (t = 5 s) (Note 2) Power dissipation (t = 5 s) (Note 3) Single-pulse avalanche energy (Note 4) 29.2 m J Avalanche...