Datasheet4U Logo Datasheet4U.com

TPCP8013 - Silicon N-Channel MOSFET

Features

  • (1) AEC-Q101 qualified (2) Small, thin package (3) Small gate charge : QSW = 4.5 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 41.5 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 2 to 3 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TPCP8013 PS-8 1,2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2012-10 2016-02-23 Rev.5.0 TPCP8013 4. Absolute Maximum Ratin.

📥 Download Datasheet

Datasheet Details

Part number TPCP8013
Manufacturer Toshiba
File Size 256.91 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TPCP8013 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TPCP8011 Silicon N-Channel MOSFET Toshiba
TPCP8404 Field Effect Transistor Toshiba
TPCP8511 Silicon NPN Transistor Toshiba
TPCP8512 Silicon NPN Transistor Toshiba
TPCP8513 Silicon NPN Transistor Toshiba

Other Datasheets by Toshiba

Part Number Description
TPCP8010 Silicon N-Channel MOSFET
TPCP8012 Silicon N-Channel MOSFET
TPCP8001-H MOSFET
TPCP8002 MOSFET
TPCP8003-H MOSFET

Full PDF Text Transcription

Click to expand full text
MOSFETs Silicon N-channel MOS (U-MOS) TPCP8013 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Small gate charge : QSW = 4.5 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 41.5 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 2 to 3 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TPCP8013 PS-8 1,2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2012-10 2016-02-23 Rev.5.0 TPCP8013 4.
Published: |